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Description
ON SEMICONDUCTOR MJE182G Bipolar (BJT) Single Transistor, NPN, 80 V, 50 MHz, 1.5 W, 3 A, 12 hFEThe MJE182G is a 80V NPN complementary plastic silicon Bipolar Transistor designed for low power audio amplifier and low current, high speed switching applications. The MJE172 (PNP) and MJE182 (NPN) are complementary devices. High DC current gain High current gain bandwidth Annular construction for low leakages Epoxy meets UL94V 0 flammability rating 100VDC Collector to base voltage (VCBO) 7V Emitter to base voltage (VEBO) 6A Peak collector current
- High DC current gain
- High current-gain - bandwidth
- Annular construction for low leakages
- Epoxy meets UL94V-0 flammability rating
- 100VDC Collector to base voltage (VCBO)
- 7V Emitter to base voltage (VEBO)
- 6A Peak collector current
- 1ADC Base current (IB)
- 10�C/W Thermal resistance, junction to case
- 83.4�C/W Thermal resistance, junction to ambient
Applications
Power Management, Audio, Industrial
Product details
| Power Dissipation Pd | 1.5W |
| DC Collector Current | 3A |
| Collector Emitter Voltage V(br)ceo | 80V |
| Transition Frequency ft | 50MHz |
| Operating Temperature Max | 150�C |
| Transistor Polarity | NPN |
| DC Current Gain hFE | 12hFE |
| No. of Pins | 3Pins |
| Product Range | - |
| Automotive Qualification Standard | - |
| Transistor Case Style | TO-225 |
| MSL | - |
Other details
| Brand | ON SEMICONDUCTOR |
| Part Number | MJE182G |
| Quantity | Each |
| Technical Data Sheet EN | |
| Product Change Notice EN |
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Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
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